Manufacturer
InfineonManufacturer Product Number
BSC0904NSIATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 66A; 37W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
10-15
Detailed Description
晶体管: N-MOSFET; 单极; 30V; 66A; 37W; PG-TDSON-8; OptiMOS™
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 17nC@10V |
| Input Capacitance | 1100pF@15V |
| Continuous Drain Current | 20A, 78A |
| Power | 2.5W, 37W |
| On-Resistance | 3.7mΩ@30A,10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.2309 | |
| 10+ | $ 1.3939 | |
| 100+ | $ 0.9163 | |
| 500+ | $ 0.7102 | |
| 1000+ | $ 0.6434 | |
| 2000+ | $ 0.5877 |
Minimum:1/Multiple:1
Total amount: