Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC070N10NS3GATMA1
Manufacturer
InfineonManufacturer Product Number
BSC070N10NS3GATMA1
Description
绝缘栅场效应管（MOSFET）
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 90 A |
| Gate Charge | 55nC@10V |
| Threshold Voltage | 3.5V @ 75µA |
| Power | 114W |
| On-Resistance | 7mΩ@50A，10V |
| Input Capacitance | 4000pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 643
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6531 | |
| 100+ | $ 0.5417 | |
| 1250+ | $ 0.4957 | |
| 2500+ | $ 0.4679 | |
| 5000+ | $ 0.4442 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSC070N10NS5
场效应管(MOSFET) 2.5W 100V 80A 1个N沟道 TDSON-8-EP(5x6)
Infineon
BSC070N10NS5-HXY
--
HUAXUANYANG
BSC070N10NS5ATMA1
晶体管: N-MOSFET; 单极; 100V; 90A; 114W; PG-TDSON-8; OptiMOS™ 3
Infineon
BSC070N10NS5ATMA1
晶体管: N-MOSFET; 单极; 100V; 90A; 114W; PG-TDSON-8; OptiMOS™ 3
Infineon
