Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC050NE2LSATMA1
Manufacturer
InfineonManufacturer Product Number
BSC050NE2LSATMA1
Description
场效应管(MOSFET) BSC050NE2LSATMA1 TDSON-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 2V@250μA |
| Drain-Source Voltage | 25V |
| Continuous Drain Current | 39A, 58A |
| Power | 2.5W, 28W |
| Gate Charge | 10.4nC@10V |
| On-Resistance | 5mΩ@30A，10V |
| Input Capacitance | 760pF @ 12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,480
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4094 | |
| 100+ | $ 0.3245 | |
| 1250+ | $ 0.2869 | |
| 2500+ | $ 0.2688 | |
| 5000+ | $ 0.2534 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC052N03LS
MOSFET N-Channel 30V MOSFET
Infineon
BSC052N03LS
绝缘栅场效应管（MOSFET）
Infineon
BSC052N03LSATMA1
场效应管(MOSFET) 2.5W；28W 30V 57A；17A 1个N沟道 TDSON-8
Infineon
BSC052N03LSATMA1
N-Channel 30 V 5.2 mOhm OptiMOS� Power-MOSFET - PG-TDSON-8
Infineon
