Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC014N04LSIATMA1
Manufacturer
InfineonManufacturer Product Number
BSC014N04LSIATMA1
Description
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of meri
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 40V |
| Input Capacitance | 180pF |
| Drain-Source On-Resistance | 0.002 Ω |
| Drain-Source Saturation Current | 166A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 896
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8982 | |
| 100+ | $ 0.7408 | |
| 1250+ | $ 0.6810 | |
| 2500+ | $ 0.6434 | |
| 5000+ | $ 0.6127 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC014N04LSTATMA1
表面贴装 N 沟道 40V 33A（Ta），100A（Tc） 3W（Ta），115W（Tc） PG-TDSON-8 FL
Infineon
BSC014N06NS
MOSFET N-CH 60V 30A TDSON-8
Infineon
BSC014N06NS
场效应管(MOSFET) 2.5W 60V 30A 1个N沟道 TDSON-8-FL
Infineon
BSC014N06NSATMA1
Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
Infineon
