Manufacturer
InfineonManufacturer Product Number
BGB741L7ESDE6327XTSA1
Description
The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.
Manufacturer Standard Lead Time
2-3
Detailed Description
The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Supplycurrent | 30 mA |
| Frequency | 50MHz~3.5GHz |
| Gain | 19.5dB |
| Supply Voltage | 1.8 V ~ 4 V |
| Zao Sheng Xi Shu | 1 dB |
| P1db | -6.5dBm |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5863 | |
| 100+ | $ 0.4944 | |
| 500+ | $ 0.4512 | |
| 1875+ | $ 0.4345 | |
| 3750+ | $ 0.4192 | |
| 7500+ | $ 0.3983 |
Minimum:1/Multiple:1
Total amount: