Manufacturer
InfineonManufacturer Product Number
BFR181E6327HTSA1
Description
Low Noise Silicon Bipolar RF Transistor NPN
Manufacturer Standard Lead Time
10-15
Detailed Description
Low Noise Silicon Bipolar RF Transistor NPN
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Operating Temperature | 150℃ |
| Ji She Ji Ji Chuan Voltage(vceo) | 12V |
| Te Zheng Frequency | 8GHz |
| Ji Dian Ji Current(ic) | 20mA |
| Power | 175mW |
| DC Gain (hFE@Ic, Vce) | 70@5mA,8V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3927 | |
| 10+ | $ 0.2395 | |
| 100+ | $ 0.1894 | |
| 500+ | $ 0.1796 | |
| 1000+ | $ 0.1490 | |
| 5000+ | $ 0.1462 |
Minimum:1/Multiple:1
Total amount:
BFR182E6327
Transistors series BFR. Technical attributes (type, package, manufacturer): BFR182, SOT23, Infineon
Infineon