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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

G2R1000MT17J

Manufacturer

GeneSiC

Manufacturer Product Number

G2R1000MT17J

Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7

Manufacturer Standard Lead Time

10-15

Detailed Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Type	N-channel
Power	54W
Continuous Drain Current	3A
Input Capacitance	139pF@1000V
Drain-Source Voltage	1700V
On-Resistance	1.2Ω@2A, 20V
Threshold Voltage	4V@2mA

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 183

Quantity	Unit Price	Ext Price
1+	$ 7.1855
3+	$ 6.3876
10+	$ 5.9531
50+	$ 5.5660

Price For：Each

Minimum:1/Multiple:1

Total amount:

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