Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXMN3A01FTA
Manufacturer
DiodesManufacturer Product Number
ZXMN3A01FTA
Description
场效应管(MOSFET) 625mW 30V 1.8A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 1.8 A |
| Drain-Source On-Resistance | 0.12 Ω |
| Power | 806W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 360
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2117 | |
| 100+ | $ 0.1601 | |
| 750+ | $ 0.1337 | |
| 1500+ | $ 0.1198 | |
| 3000+ | $ 0.1100 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
ZXMN3A01ZTA
场效应管(MOSFET) 970mW 30V 2.2A 1个N沟道 SOT-89
Diodes
ZXMN3A01ZTA
MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
Diodes
ZXMN3A01ZTA
MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
Diodes
ZXMN3A01ZTA
--
Diodes