Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXMC6A09DN8TA
Manufacturer
DiodesManufacturer Product Number
ZXMC6A09DN8TA
Description
场效应管(MOSFET) 1.8W 60V 3.7A；3.9A 1个N沟道+1个P沟道 SO-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 0.045Ω |
| Drain-Source Saturation Current | 5.1A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 219
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6629 | |
| 10+ | $ 0.6030 | |
| 30+ | $ 0.5709 | |
| 100+ | $ 0.5333 | |
| 500+ | $ 0.5152 | |
| 1000+ | $ 0.5083 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
ZXMC6A09DN8TC-VB
--
Vbsemi
ZXMD63N03XTA
场效应管(MOSFET) 1.04W 30V 2.3A 2个N沟道 MSOP-8
Diodes
ZXMHC10A07N8TC
--
Diodes
ZXMHC10A07N8TC
H-Br 100V 1A 1700mOhm SO-8 RoHSconf
Diodes