Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXM62P03E6TA
Manufacturer
DiodesManufacturer Product Number
ZXM62P03E6TA
Description
场效应管(MOSFET) 625mW 30V 1.5A 1个P沟道 SOT-26
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 1.5A |
| Drain-Source On-Resistance | 0.15Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,964
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3342 | |
| 10+ | $ 0.2688 | |
| 30+ | $ 0.2242 | |
| 100+ | $ 0.2103 | |
| 500+ | $ 0.1963 | |
| 1000+ | $ 0.1922 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllZXM64P02XTA
场效应管(MOSFET) 1.1W 20V 3.5A 1个P沟道 MSOP-8
Diodes
ZXM64P03XTA
场效应管(MOSFET) 1.1W 30V 3.8A 1个P沟道 MSOP-8
Diodes
ZXMC10A816N8TA
--
Diodes
ZXMC10A816N8TC
CMOS 100V 2A 230mOhm SO-8 RoHSconf
Diodes