Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MMBT123S-7-F
Manufacturer
DiodesManufacturer Product Number
MMBT123S-7-F
Description
三极管(BJT) 300mW 18V 1A NPN SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 300mW |
| Jing Ti Guan Type | NPN |
| Te Zheng Frequency | 100MHz |
| Ji Dian Ji Current（ic） | 1A |
| Ji Dian Ji Jie Zhi Current（icbo） | 1µA |
| Ji She Ji Ji Chuan Voltage（vceo） | 18V |
| DC Gain (hFE@Ic, Vce) | 150@100mA, 1V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 500mV@30mA, 300mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0724 | |
| 200+ | $ 0.0460 | |
| 1500+ | $ 0.0404 | |
| 3000+ | $ 0.0348 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MMBT1616AG-G-AE3-R
三极管(BJT) 350mW 60V 1A NPN SOT-23
UTC
MMBT2131T1G
雙極性晶體管- BJT 700mA 40V PNP
Onsemi
MMBT2132T3
两极晶体管 - BJT 700mA NPN
Onsemi
MMBT2132T3G
两极晶体管 - BJT 700mA NPN
Onsemi