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DMT6018LDR-7
Manufacturer
DiodesManufacturer Product Number
DMT6018LDR-7
Description
MOSFET BVDSS: 41V 60V V-DFN3030-
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 3 V @ 250 µA |
| Type | Dual N-Channel |
| Continuous Drain Current | 8.8 A |
| Power | 1.9W |
| Input Capacitance | 869pF@30V |
| On-Resistance | 17mΩ@8.2A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,645
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8035 | |
| 10+ | $ 0.7004 | |
| 100+ | $ 0.5877 | |
| 500+ | $ 0.5668 | |
| 1000+ | $ 0.5514 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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场效应管(MOSFET) 1.39W 60V 10A 1个N沟道 SOP-8
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