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DMN61D8LVTQ-7
Manufacturer
DiodesManufacturer Product Number
DMN61D8LVTQ-7
Description
场效应管(MOSFET) 820mW 60V 630mA 2个N沟道 TSOT-26
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | Dual N-Channel |
| Threshold Voltage | 2V@1mA |
| Power | 820 mW |
| On-Resistance | 1.8 Ω @ 150 mA, 5 V |
| Continuous Drain Current | 630mA |
| Input Capacitance | 12.9pF@12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,905
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3105 | |
| 50+ | $ 0.2409 | |
| 150+ | $ 0.2103 | |
| 500+ | $ 0.1727 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMN61D9U-13
场效应管(MOSFET) 370mW 60V 380mA 1个N沟道 SOT-23-3
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DMN61D9UDW-7
场效应管(MOSFET) 320mW 60V 350mA 2个N沟道 SOT-363
Diodes
DMN61D9UDWQ-7
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Diodes
DMN61D9UT-7
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Diodes
