Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN60H080DS-13
Manufacturer
DiodesManufacturer Product Number
DMN60H080DS-13
Description
场效应管(MOSFET) 1.1W 600V 80mA 1个N沟道 SOT-23-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Power | 1.1W |
| Continuous Drain Current | 80mA |
| Input Capacitance | 25pF@25V |
| Gate Charge | 1.7nC @ 10V |
| On-Resistance | 100Ω @ 60mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,006
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1225 | |
| 100+ | $ 0.0836 | |
| 500+ | $ 0.0752 | |
| 2500+ | $ 0.0696 | |
| 5000+ | $ 0.0641 | |
| 10000+ | $ 0.0585 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN60H080DS-7
表面贴装 N 沟道 600V 80mA (Ta) 1.1W（Ta） SOT-23
Diodes
DMN60H080DS-7
场效应管(MOSFET) 1.1W 600V 80mA 1个N沟道 SOT-23-3
Diodes
DMN6140L
--
TECH PUBLIC
DMN6140L-13
--
Diodes
