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DMN53D0LDW-13
Manufacturer
DiodesManufacturer Product Number
DMN53D0LDW-13
Description
场效应管(MOSFET) 310mW 50V 360mA 2个N沟道 SOT-363-6
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.31W |
| Gate-Source Breakdown Voltage | 50V |
| Input Capacitance | 4pF |
| Drain-Source On-Resistance | 1.6Ω |
| Drain-Source Saturation Current | 0.36A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,620
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0682 | |
| 100+ | $ 0.0543 | |
| 300+ | $ 0.0473 | |
| 1000+ | $ 0.0418 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN53D0LDW-7
SOT363/DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Diodes
DMN53D0LDW-7
场效应管(MOSFET) 310mW 50V 360mA 2个N沟道 SOT-363
Diodes
DMN53D0LDW-7
MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
Diodes
DMN53D0LDWQ-7
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Diodes
