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DMN3190LDW-7
Manufacturer
DiodesManufacturer Product Number
DMN3190LDW-7
Description
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 1A |
| Drain-Source On-Resistance | 0.19Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 233
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2214 | |
| 5+ | $ 0.2061 | |
| 10+ | $ 0.1908 | |
| 15+ | $ 0.1782 | |
| 50+ | $ 0.1281 | |
| 75+ | $ 0.1114 | |
| 100+ | $ 0.1003 | |
| 300+ | $ 0.0752 | |
| 500+ | $ 0.0738 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN3190LDWQ-7
场效应管(MOSFET) 320mW 30V 1A 2个N沟道 SOT-363
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DMN3190LDWQ-7
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