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DMN3032LE-13
Manufacturer
DiodesManufacturer Product Number
DMN3032LE-13
Description
场效应管(MOSFET) 1.8W 30V 5.6A 1个N沟道 SOT-223
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 5.6A |
| Drain-Source On-Resistance | 0.029Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,706
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1184 | |
| 100+ | $ 0.0780 | |
| 1250+ | $ 0.0710 | |
| 2500+ | $ 0.0641 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN3032LFDB-7
场效应管(MOSFET) 1W 30V 6.2A 2个N沟道 UDFN2020-6
Diodes
DMN3032LFDB-7
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Diodes
DMN3032LFDBQ-13
MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
Diodes
DMN3032LFDBQ-7
30V 6.2A 30mO Dual N-ch U-DFN2020-6
Diodes
