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DMN2019UTS-13
Manufacturer
DiodesManufacturer Product Number
DMN2019UTS-13
Description
Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Type | 2 N-Channel (Dual) Common Drain |
| Continuous Drain Current | 5.4A |
| Threshold Voltage | 950mV@250µA |
| Power | 780mW |
| Input Capacitance | 143pF@10V |
| On-Resistance | 18.5mΩ@7A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 24,360
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1337 | |
| 100+ | $ 0.1281 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMN2019UTS-HXY
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HUAXUANYANG
DMN2020LSN-7
场效应管(MOSFET) 610mW 20V 6.9A 1个N沟道 SC-59-3
Diodes
DMN2020LSN-7
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Diodes
DMN2020LSN-HXY
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HUAXUANYANG
