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DMN2016LHAB-7
Manufacturer
DiodesManufacturer Product Number
DMN2016LHAB-7
Description
场效应管(MOSFET) 1.2W 20V 7.5A 2个N沟道 U-DFN2030-6-EP
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Type | 2 N-Channel (Dual) Common Drain |
| Continuous Drain Current | 7.5 A |
| Power | 1.2 W |
| Input Capacitance | 1550 pF @ 10 V |
| On-Resistance | 15.5 mΩ @ 4 A, 4.5 V |
| Threshold Voltage | 1.1 V @ 250 µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,014
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2117 | |
| 100+ | $ 0.1601 | |
| 750+ | $ 0.1337 | |
| 1500+ | $ 0.1198 | |
| 3000+ | $ 0.1100 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
Diodes
DMN2016UTS-HXY
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