Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN2011UTS-13
Manufacturer
DiodesManufacturer Product Number
DMN2011UTS-13
Description
场效应管(MOSFET) 1.3W 20V 21A 1个N沟道 TSSOP-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Power | 1.3W |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 21A |
| Gate Charge | 56 nC @ 10 V |
| Input Capacitance | 2248pF@10V |
| On-Resistance | 11mΩ@7A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,949
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1253 | |
| 100+ | $ 0.0961 | |
| 1250+ | $ 0.0808 | |
| 2500+ | $ 0.0738 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN2013UFDE-7
Transistor: N-MOSFET
Diodes
DMN2013UFDE-7
表面贴装型-N-通道-20V-10.5A（Ta）-660mW（Ta）-U-DFN2020-6（E-类）
Diodes
DMN2013UFDE-7
MOSFET N-CH 20V 10.5A U-DFN
Diodes
DMN2014LHAB-13
--
Diodes
