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DMN2005UFG-7
Manufacturer
DiodesManufacturer Product Number
DMN2005UFG-7
Description
场效应管(MOSFET) 1.05W 20V 18.1A 1个N沟道 PowerDI3333-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 18A |
| Drain-Source On-Resistance | 0.0087Ω |
| Input Capacitance | 477pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,269
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2353 | |
| 100+ | $ 0.1796 | |
| 1000+ | $ 0.1560 | |
| 2000+ | $ 0.1448 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN2005UPS-13
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Diodes
DMN2008LFU-7
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Diodes
DMN2008LFU-7
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Diodes
DMN2009LSS-13
场效应管(MOSFET) 2W 20V 12A 1个N沟道 SO-8
Diodes
