Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN10H220LQ-7
Manufacturer
DiodesManufacturer Product Number
DMN10H220LQ-7
Description
表面贴装 N 沟道 100V 1.6A（Ta） 1.3W（Ta） SOT-23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source On-Resistance | 0.22Ω |
| Drain-Source Saturation Current | 1.4 A |
| Input Capacitance | 17pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,383
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.4888 | |
| 10+ | $ 0.3064 | |
| 100+ | $ 0.1936 | |
| 500+ | $ 0.1420 | |
| 1000+ | $ 0.0975 | |
| 5000+ | $ 0.0961 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMN10H220LVT-7
--
Diodes
DMN10H220LVT-7
MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs
Diodes
DMN10H700S-13
场效应管(MOSFET) 400mW 100V 700mA 1个N沟道 SOT-23-3
Diodes
DMN10H700S-13
--
Diodes
