Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMMT5551S-7-F
Manufacturer
DiodesManufacturer Product Number
DMMT5551S-7-F
Description
三极管(BJT) 300mW 160V 200mA NPN SOT-26
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 300mW |
| Te Zheng Frequency | 300MHz |
| Ji Dian Ji Jie Zhi Current（icbo） | 50 nA |
| Ji Dian Ji Current（ic） | 200mA |
| DC Gain (hFE@Ic, Vce) | 80@10mA, 5V |
| Ji She Ji Ji Chuan Voltage（vceo） | 160V |
| Jing Ti Guan Type | 2 NPN (Dual) Pairing |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 200mV @ 5mA, 50mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2966 | |
| 10+ | $ 0.2896 | |
| 30+ | $ 0.2855 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN100-7-F
场效应管(MOSFET) 500mW 30V 1.1A 1个N沟道 SOT-23
Diodes
DMN1001UCA10-7
--
Diodes
DMN1002UCA6-7
场效应管(MOSFET) -55℃~+150℃@(Tj) 1.1W 68.6nC@4V 2个N沟道 X4-DSN3118-6
Diodes
DMN1004UFDF-7
Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R
Diodes
