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DMG3415UFY4Q-7
Manufacturer
DiodesManufacturer Product Number
DMG3415UFY4Q-7
Description
场效应管(MOSFET) 650mW 16V 2.5A 1个P沟道 X2-DFN2015-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source On-Resistance | 0.039Ω |
| Gate-Source Breakdown Voltage | 16V |
| Drain-Source Saturation Current | 0.0025A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 540
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2576 | |
| 50+ | $ 0.2019 | |
| 150+ | $ 0.1782 | |
| 500+ | $ 0.1490 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMG3415UQ-7
场效应管(MOSFET) 900mW 20V 4A 1个P沟道 SOT-23
Diodes
DMG3415UQ-7
原装正品，上海工厂库存
Diodes
DMG3415UQ-7-HXY
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DMG3418L-7
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