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DMG1012T-7
Manufacturer
DiodesManufacturer Product Number
DMG1012T-7
Description
场效应管(MOSFET) 280mW 20V 630mA 1个N沟道 SOT-523
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 0.63A |
| Power | 0.28W |
| Drain-Source On-Resistance | 0.4Ω |
| Input Capacitance | 5.37pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0348 | |
| 200+ | $ 0.0223 | |
| 1500+ | $ 0.0195 | |
| 3000+ | $ 0.0167 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMG1012T-ES
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EIECSUPER
DMG1012T-VB
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Vbsemi
DMG1012TQ-7
MOSFET NCH 20V 630MA SOT523
Diodes
DMG1012TQ-7
场效应管(MOSFET) 280mW 20V 630mA 1个N沟道 SOT-523
Diodes
