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2DB1182Q-13
Manufacturer
DiodesManufacturer Product Number
2DB1182Q-13
Description
三极管(BJT) 10W 32V 2A PNP TO-252
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Jing Ti Guan Type | PNP |
| Power | 10W |
| Ji She Ji Ji Chuan Voltage（vceo） | 32V |
| Ji Dian Ji Jie Zhi Current（icbo） | 1µA |
| Ji Dian Ji Current（ic） | 2 A |
| Te Zheng Frequency | 110MHz |
| DC Gain (hFE@Ic, Vce) | 120 @ 500 mA, 3 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 800 mV @ 200 mA, 2 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1044 | |
| 50+ | $ 0.0933 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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