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SS8050-G
Manufacturer
ComchipManufacturer Product Number
SS8050-G
Description
n/a
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 300mW |
| Jing Ti Guan Type | NPN |
| Te Zheng Frequency | 100MHz |
| Ji Dian Ji Current（ic） | 1.5A |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Ji She Ji Ji Chuan Voltage（vceo） | 25V |
| Operating Temperature | 150℃ |
| DC Gain (hFE@Ic, Vce) | 100@10mA, 1V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 400mV @ 5mA, 50mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 49,082
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3036 | |
| 10+ | $ 0.1866 | |
| 100+ | $ 0.1184 | |
| 500+ | $ 0.0863 | |
| 1000+ | $ 0.0766 | |
| 3000+ | $ 0.0627 | |
| 6000+ | $ 0.0557 | |
| 9000+ | $ 0.0473 | |
| 24000+ | $ 0.0446 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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晶体管类型：NPN集射极击穿电压(Vceo)：25V集电极电流(Ic)：1.5A功率(Pd)：300mW集电极截止电流(Icbo)：100nA集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：500mV@800mAHFE:200-350
MSKSEMI