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AOSP21357
Manufacturer
AOSManufacturer Product Number
AOSP21357
Description
场效应管(MOSFET) 3.1W 30V 16A 1个P沟道 SO-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 16A |
| Drain-Source On-Resistance | 0.0085Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,110
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2896 | |
| 50+ | $ 0.2284 | |
| 150+ | $ 0.2019 | |
| 500+ | $ 0.1685 | |
| 3000+ | $ 0.1546 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllAOSP32320C
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AOS
AOSP32368
场效应管(MOSFET) 3.1W 30V 16A 1个N沟道 SOIC-8
AOS
AOSP32368
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AOS
AOSP36326C
Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
AOS
