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CJCD2004
Manufacturer
JCET/JSCJManufacturer Product Number
CJCD2004
Description
场效应管(MOSFET) 7.3mΩ@4.5V,3A 20V 10A 1个N沟道 DFNWB-6-EP(2x3)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 10A |
| Threshold Voltage | 1V |
| Gate Charge | 17 nC |
| Reverse Transfer Capacitance | 210 pF |
| Input Capacitance | 1.95nF |
| On-Resistance | 7.3mΩ @ 4.5V, 3A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,345
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1838 | |
| 50+ | $ 0.1420 | |
| 150+ | $ 0.1253 | |
| 500+ | $ 0.1030 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
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场效应管(MOSFET) 12.5mΩ@4.5V,3A 20V 7A 1个N沟道 DFNWB-6-EP(3x2)
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