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PXT8050
Manufacturer
SHIKUESManufacturer Product Number
PXT8050
Description
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Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Jing Ti Guan Type | NPN |
| Te Zheng Frequency | 100MHz |
| Ji Dian Ji Current（ic） | 1.5A |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Ji She Ji Ji Chuan Voltage（vceo） | 25V |
| Power | 625mW |
| DC Gain (hFE@Ic, Vce) | 45 @ 5 mA, 1 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 500 mV @ 800 mA, 80 mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 900
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0181 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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晶体管类型：PNP集射极击穿电压(Vceo)：25V集电极电流(Ic)：1.5A功率(Pd)：500mW直流电流增益(hFE@Ic,Vce)：200@100mA,1V200-350PNP
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PXT8550
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HIGH DIODE