Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
PJMG40P60TE
Manufacturer
PJSEMIManufacturer Product Number
PJMG40P60TE
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Type | 1 P-Channel |
| Continuous Drain Current | 40 A |
| Power | 65W |
| Gate Charge | 23nC@10V |
| Reverse Transfer Capacitance | 17 pF @ 25 V |
| On-Resistance | 18mΩ@10V,15A |
| Threshold Voltage | 1.75V@250μA |
| Input Capacitance | 1.505nF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 74
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4498 | |
| 10+ | $ 0.3523 | |
| 30+ | $ 0.3119 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
PJMG60P60TE
--
PJSEMI
PJMH074N60FRC_T0_00601
ESD抑制器/TVS二晶體 600V 74mohm 53A Fast Recovery Qrr trr SJ MOSFET
PANJIT
PJMH120N60EC_T0_00601
ESD抑制器/TVS二晶體 600V 120mohm 30A Easy to driver SJ MOSFET
PANJIT
PJMP120N60EC_T0_00001
MOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5
PANJIT
