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MMDT2907ASG
Manufacturer
PJSEMIManufacturer Product Number
MMDT2907ASG
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Power | 1 W |
| Ji Dian Ji Current（ic） | 600 mA |
| Ji She Ji Ji Chuan Voltage（vceo） | 60 V |
| Te Zheng Frequency | 200MHz |
| Jing Ti Guan Type | PNP |
| Ji Dian Ji Jie Zhi Current（icbo） | 10 nA |
| DC Gain (hFE@Ic, Vce) | 300 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 400mV@150mA, 15mA, 1.6V@500mA, 50mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,280
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0362 | |
| 200+ | $ 0.0292 | |
| 600+ | $ 0.0251 | |
| 3000+ | $ 0.0209 | |
| 9000+ | $ 0.0195 | |
| 21000+ | $ 0.0181 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllMMDT2907V-7
TRANS 2PNP 60V 0.6A SOT563
Diodes
MMDT2907V-7
三极管(BJT) 150mW 60V 600mA PNP SOT-563
Diodes
MMDT3052DW
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CBI
MMDT3052DW
晶体管类型：2个NPN集射极击穿电压(Vceo)：50V集电极电流(Ic)：200mA功率(Pd)：150mW集电极截止电流(Icbo)：100nA集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：300mV@100mA,10mA特征频率(fT)：200MHz工作温度：+125℃@(Tj)
MSKSEMI
