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1N60G
Manufacturer
UMWManufacturer Product Number
1N60G
Description
场效应管(MOSFET) 11Ω@10V,500mA 600V 1A 1个N沟道 SOT-223
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Operating Temperature | 150℃ |
| Gate Charge | 4.8nC@10V |
| Continuous Drain Current | 1A |
| Input Capacitance | 150pF@25V |
| On-Resistance | 11Ω@500mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,303
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0863 | |
| 100+ | $ 0.0543 | |
| 1250+ | $ 0.0460 | |
| 2500+ | $ 0.0404 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
1N60G-AA3-R
原装正品
UTC
1N60G-AA3-R
场效应管(MOSFET) 8W 600V 1A 1个N沟道 SOT-223
UTC
1N60L
表面贴装型 N 通道 600 V 1A（Tj） TO-252（DPAK）
UMW
1N60L-T92-B
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UTC