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1N60G
Manufacturer
UMWManufacturer Product Number
1N60G
Description
场效应管(MOSFET) 11Ω@10V,500mA 600V 1A 1个N沟道 SOT-223
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Operating Temperature | 150℃ |
| Gate Charge | 4.8nC@10V |
| Continuous Drain Current | 1A |
| Input Capacitance | 150pF@25V |
| On-Resistance | 11Ω@500mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 18,165
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.0836 | |
| 50+ | $ 0.0654 | |
| 150+ | $ 0.0557 | |
| 500+ | $ 0.0487 | |
| 2500+ | $ 0.0418 | |
| 5000+ | $ 0.0390 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
1N60G-AA3-R
原装正品
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1N60G-AA3-R
场效应管(MOSFET) 8W 600V 1A 1个N沟道 SOT-223
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1N60L
表面贴装型 N 通道 600 V 1A（Tj） TO-252（DPAK）
UMW
1N60L-T92-B
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UTC