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HY19P03B
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HY19P03B
Description
场效应管(MOSFET) 96W 30V 90A 1个P沟道 TO-263-2
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 3V @ 250μA |
| Type | 1 P-Channel |
| Continuous Drain Current | 90 A |
| Power | 96W |
| On-Resistance | 6mΩ@10V,45A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,683
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4066 | |
| 10+ | $ 0.3259 | |
| 30+ | $ 0.2924 | |
| 100+ | $ 0.2493 | |
| 500+ | $ 0.2131 | |
| 800+ | $ 0.2033 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
HY19P03D
场效应管(MOSFET) 50W 30V 90A 1个P沟道 TO-252-2
HUAYI MICROELECTRONICS
HY1E470MC063054MEO
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Hyncdz
HY2.0-10Y
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SHOUHAN
HY2.0-10Y
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HANXIA
